Abstract
Several InN film samples with superb properties were prepared on a self-supporting diamond substrate for different nitrogen flow rates using an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. After the InN film samples were obtained, the samples were characterized via reflected high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and electron probe micro-analysis (EPMA) to study the effect of the nitrogen flow on the quality of the InN films. The experimental results show that the variation in the nitrogen flow has a great impact on the preferential growth of the (0002) crystal plane of the InN thin-film. By increasing the nitrogen flow moderately, the crystal quality of the film is improved. Under the growth condition of appropriate nitrogen flow, InN thin-films with a preferred orientation along the c-axis can be obtained, and the surface of the resulting InN thin-films is relatively flat. However, a high nitrogen flow does not improve the film crystal quality. The results of the experiment and of the analysis show that the InN films prepared with a nitrogen flow rate of 80 sccm have an excellent preferential orientation. The result of the EPMA test shows that the percentages of the In and N atoms in the prepared film samples are close to a ratio of 1:1, and a small amount of metal In droplets is present. In addition, the InN thin-films prepared in such condition have an excellent surface morphology and composition.
Highlights
Indium nitride (InN) has become an important semiconductor material due to its narrow band gap (0.7 eV) and excellent physical properties (Bashir et al, 2018; Dwivedi et al, 2018; Madapu et al, 2018; Polanco and Lindsay, 2018)
After the experiment was completed, the InN thin film samples prepared with different nitrogen flow rates were characterized by using the (RHEED) method
As the nitrogen flow rate increases from 60 to 80 sccm, the reflected high-energy electron diffraction (RHEED) pattern of the InN film gradually changes from a continuous ring to a broken ring, and the definition of the RHEED pattern increases
Summary
Indium nitride (InN) has become an important semiconductor material due to its narrow band gap (0.7 eV) and excellent physical properties (Bashir et al, 2018; Dwivedi et al, 2018; Madapu et al, 2018; Polanco and Lindsay, 2018). With the improvement in the film growth methods in recent years, researchers have successfully grown InN thin films on heterogeneous substrates, such as αAl2O3 via magnetron sputtering, metal-organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), and plasma-enhanced MBE Heterogeneous substrates, such as α-Al2O3, do not have excellent heat dissipation. Achieving a low-temperature growth of high-quality InN films on a self-supporting diamond thick film substrate is key to foster the application of InN in optoelectronic devices and high-frequency, high-power electronic devices. A number of InN thin film samples was prepared using the ECR-PEMOCVD system at low temperature on a self-supporting diamond substrate for different nitrogen reaction source flows. The surface morphology of the InN thin film was tested and analyzed via the scanning electron microscopy (SEM), atomic force microscopy (AFM), and electron probe microanalysis (EPMA) methods
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