Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Shuaijie Wang,Fuwen Qin,Dong Zhang,Yizhen Bai,Jingdan Zhang

doi:10.3390/coatings10121185

Abstract

The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

Highlights

Due to their current and potential applications in an extensive range of electronic and optoelectronic devices, group III nitride semiconductors (AlN, GaN, Indium nitride (InN)) have received significant attention in the last 10 years and are considered as important technical materials [1,2,3,4,5,6]
InN thin films were produced on a self-standing diamond substrate at various deposition temperatures by ECR-PEMOCVD
reflection high-energy electron diffraction (RHEED) Measurement of InN Thin Films Prepared at Varying Temperatures

Summary

Introduction

Due to their current and potential applications in an extensive range of electronic and optoelectronic devices, group III nitride semiconductors (AlN, GaN, InN) have received significant attention in the last 10 years and are considered as important technical materials [1,2,3,4,5,6]. The band gaps of ternary alloys, such as InGaN and InAlN, which are composed of InN, GaN and AlN, can cover the whole range of visible light. This enables the design of various colored light-emitting diodes (LEDs) and solar cells with relatively high efficiency. Quantum efficiency inside a GaN/InGaN solar cell prepared on a sapphire substrate is as high as 60% [12]

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Conclusion