Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs

Abstract

In this study, Si implantation was used to improve the interface properties of SiC/SiO2 in 4H-SiC lateral MOSFETs. In lateral n-channel MOSFETs, a 4%–6% improvement on the linear and saturation current was observed with Si implantation. From high/low-frequency CV measurements, the Si-implanted n-type MOS capacitor showed a 20% lower interface state density than the non-implanted ones at an energy level of EC − E = 0.2 eV, without degrading oxide integrity. Lateral p-channel MOSFETs, on the other hand, showed a 36.5% reduction in the linear current and a 16.6% reduction in the saturation current with Si implantation. Furthermore, the temperature coefficients of lateral and vertical MOSFETs implanted by Si were monitored up to 175 °C. The temperature coefficients of the Si-implanted n-channel and p-channel lateral MOSFETs were nearly identical to those of their non-implanted counterparts.