Abstract
A new EST structure, in which the lateral N-channel MOSFET is isolated from the thyristor by using SIMOX technology to eliminate the parasitic thyristor, is presented. This structure exhibits high voltage current saturation beyond the breakdown voltage of the lateral N-channel MOSFET. It is shown with the aid of two-dimensional numerical simulations that the proposed SIMEST has a lower on-state voltage drop than the conventional EST and the IGBT, and an FBSOA comparable to that of an IGBT with identical design rules. Experimental results on the SIMEST fabricated with a 9 mask SIMOX Smart Power process are presented.
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