Abstract
ABSTRACTIn this paper, we investigate the effective inversion layer mobility of lateral 4H-SiC MOSFETs. Initially, lateral n-channel MOSFETs were fabricated to determine the effect of p-type epi-regrowth on a highly doped p-well surface. The negative effects of the high p-well doping are still seen with 1500 Å p-type regrowth, while growing 0.5 um or more appears to be sufficient to grow out of the damaged area. A second experiment was performed to examine the effects of doping during epitaxial regrowth versus using ion implantation after regrowth. Comparable mobilities and threshold voltages were observed for equivalent epitaxial and implanted doping concentrations.
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