Abstract
The study on the diffusion of Cd and Zn in InP at a temperature range of 450–700°C and their compared results are described in this paper. The effects of various impurity sources, such as Cd and Zu as well as their compounds on the results of diffusion are investigated intensively. UsingX 2 3/t ratio defined by the square of the diffusion depthX 3 2 and timet as a measure of the diffusion velocity, we show the plots ofX 3 2/t vs temperatureT. It is found that the diffusion velocity of Cd, especially CdP2 diffusion sources is slower and thus easier to control the diffusion depth and concentration. However they are more ideal diffusion impurity sources. We explain the complication phenomena of Cd- and Zn-diffusion in InP with neutral complex pressented by Tien (1979).
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