Abstract
A stripe heater has been used to diffuse zinc into semi-insulating and n-type (001) InP from a thin spun-on zinc silica film. The diffusion profiles were investigated by means of secondary ion mass spectroscopy and capacitance-voltage measurements. Diffusion depth and activation energy of an effective diffusion coefficient are compared with those published for Zn ampoule diffusion. For the diffusion of Zn in semi-insulating InP an activation energy of 1.35 eV was found. An expression for the effective diffusion coefficient for Zn in InP is derived and compared with results of a Boltzmann-Matano analysis of diffusion profiles. As a result the zinc diffusion can be described by the interstitial-substitutional model, where Zn diffuses as a singly positive charged interstitial and acts as an acceptor by filling an In vacancy.
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