Diffusion of Cd And Zn In InP between 550 and 650°C

Abstract

A large number of diffusions have been carried out in sealed quartz ampoules in the temperature range 550–650°C using Zn and Cd in InP. Three-fronted profiles were observed at 650°C for both Cd and Zn and the diffused samples were extensively analysed using Hall measurements, electron beam induced current, electrochemical carrier concentration profiling and thermal probing. These electrical measurements identified the p/n junction unambiguously and indicated a region of high compensation between the p/n junction and the third line. The weight of P added to the ampoule had little effect up to 0.4mg in 0.75cm3 volume at which point a dramatic reduction in diffusion depth for all fronts occurred for increasing P. Diffusion coefficients for Cd and Zn were estimated and plotted as a function of temperature.