Abstract
Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were fabricated on a Pt/SiO2/Si substrate by sol-gel method. The effects of chelating agent acetylacetone (HAcHAc) on the formation temperature and the microstructure of Sr0.5Ba0.5-xBixTiO3 (SBT) thin films were investigated in this paper. The microstructure of BST thin films was examined by XRD and TEM. It is found that Bi3+ doping decreases dielectric loss, improves frequency dispersion for BST thin films. The peak of temperature-dependence of dielectric constant of Bi3+-doped BST thin films is compressed and moves to a low-temperature region. An inclined angle of approximately 1.8o between the two different polarization vectors was observed for BST thin film from the results of high-resolution transmission electron microscopy (HRTEM). The Pr, Ps and Ec was 0.22μC/cm2, 0.72μC/cm2 and 60Kv/cm respectively for Sr0.5Ba0.485Bi0.015TiO3 thin film at 100Hz, 20V.
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