Fabrication and characteristics of La, Cd and Sn doped BST thin films by sol–gel method

Abstract

Ba1−x Sr x TiO3 (BST) thin films doped with La, Cd and Sn were prepared by sol–gel method on the Pt/Ti/SiO2/Si substrate. X-ray diffraction analysis and atomic force microscopy showed that dopant La and Cd causes decreased grain size of BST thin films obviously, and Sn-doped BST thin films was similar to BST films in grain size. La and Cd doped decreased the tunability of BST thin films and Sn doped increased it, which may be explained by stress, electronegativity and oxygen vacancies factors. All the doped BST thin films improved the leakage current characteristic.