Abstract
The effects of proton irradiation energy on Al2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT) were studied. MOSHEMTs were irradiated at different irradiation energies of 5 MeV, 10 MeV, or 15 MeV with a fixed proton dose of 5 × 1015 cm-2. After the 5 MeV, 10 MeV and 15 MeV proton irradiation, MOSHEMTs’ saturation current at gate voltage of 1V were reduced by 95.3, 68.3 and 59.8% and maximum transconductance were reduced by 88, 54.4, and 40.7% respectively. The carrier removal rate of the irradiation energy employed in this study was in the range of 127-289 cm-1, having lower energy with the highest removal rate.
Published Version
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