Abstract
We have investigated Al/Pt (20/50 nm) ohmic contacts on a n-type zinc oxide (ZnO:Al) epitaxial layer. The samples were annealed at temperatures of 300°C and 600°C for 1 min in nitrogen ambient. Current-voltage measurements indicated that the as-deposited sample was ohmic with a specific contact resistivity of However, the annealing at 300°C resulted in a significantly better ohmic behavior, with a contact resistivity of A further increase in the annealing temperature to 600°C led to a decrease in specific contact resistivity due to extensive interfacial reactions between Al and ZnO. Both Auger electron spectroscopy and glancing angle X-ray diffraction were employed to investigate the nature of the interfacial reaction between the Al/Pt and ZnO layer with increasing annealing temperature. Possible explanation is given to describe the temperature dependence of the specific contact resistivity. © 2004 The Electrochemical Society. All rights reserved.
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