Abstract
We have investigated Ti/Au (30/50 nm) ohmic contacts to The samples are annealed at temperatures of 300 and 500°C for 60 s in a flowing atmosphere. Current-voltage measurements show that the as-deposited sample is ohmic with a specific contact resistance of However, annealing of the sample at 300°C results in much better ohmic behavior with a contact resistance of Further increase in annealing temperature (500°C) causes the degradation of the ohmic property. Glancing angle X-ray diffraction and Auger electron spectroscopy are used to investigate interfacial reactions between the Ti/Au and ZnO layers. It is shown that both rutile and srilankite phases are formed in the as-deposited and annealed samples. It is further shown that annealing at 500°C results in the formation of new phases such as and A possible explanation is given to describe the annealing temperature dependence of the specific contact resistance. © 2001 The Electrochemical Society. All rights reserved.
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