Abstract
We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 1017 cm−3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600∘C for 2 min in flowing N2 atmosphere resulted in a specific contact resistivity of 3.1 × 10−5 Ω cm2. Both GXRD and AES depth profile results show that Ga3Pt5, Ga2Pd5, and Au7Ga2 phases are formed at the interface region between metal and GaN when annealed at temperatures 600∘C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au contacts.
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