Study of recombination process of lead-free cesium titanium (IV) based single halide and mixed halide perovskite compounds absorbing layer

Abstract

The present research work represents the study of the recombination process at different positions of a hetero junction solar cell. The study for recombination process at depletion region, quasi-neutral region, front (right) contact region and back (left) contact region for lead-free Cesium Titanium (IV) based single halide perovskites compounds viz Cs2TiBr6, Cs2TiI6, Cs2TiCl6, and Cs2TiF6 and mixed halide compounds such asCs2TiI1Br5, Cs2TiI2Br4, Cs2TiI3Br3, Cs2TiI4Br2,and Cs2TiI5Br1was studied using SCAPS-1D device simulator. The cell architecture used for the study is FTO/TiO2/absorbing layer/CuSCN/Ag. Open circuit voltage (VOC) is a key performance parameter to understand the recombination process at the front contact and back contact interfaces of a solar cell device. This research article enumerated the total recombination current density (JTot. Recom), bulk recombination rate (JBulk), Schckley-Read-Hall recombination rate or defect recombination rate (JSRH) for the solar cell device.