Abstract
In this paper, we have investigated the effects of incorporating Indium Tin Oxide (ITO) as front contact and Nickel as back contact in the In0.65Ga0.35N singlejunction (SJ) solar cell. The effects of variation in doping concentrations and thickness of p-layer and n-layer on the cell performance are studied. The maximum efficiency of the cell is found at 500 nm and 100 nm thicknesses of the p-layer and the n-layer respectively. The optimum bandgap for both the layers is 1.5 eV with the same doping concentration. The optimum efficiency, open circuit voltage, short circuit current density and fill factor found from the proposed cell are 25.62%, 0.97 V, 29.59 mA/cm2 and 0.85 respectively for an air-mass, AM 1.5.
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