Abstract
Room-temperature two-wavelength excited photoluminescence (PL) measurements have been performed in the kesterite Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ZnSnS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> (CZTS) and Cu2ZnSn(S,Se)4 (CZTSSe) thin film absorbers. A defect level at 0.8 eV from the valence band and its properties are investigated. Two light sources of 635 nm and 1550 nm diode lasers, respectively, were used for above bandgap and 0.8 eV defect level excitation. The two-wavelength excited PL intensity was stronger than that only above-gap laser irradiation for the CZTS specimen. This phenomenon strongly suggests that the 0.8eV defect level acts as recombination center at room temperature. On the other hand, this defect may act as a trap in lower gap CZTSSe.
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