Abstract
The properties of the defect level at 0.8eV above the valence band in Cu(In1−x,Gax)Se2 were studied by the two-wavelength excited photoluminescence (PL) method. The two-wavelength excited PL involves two different pumping light sources, that is, a 635nm diode laser used as an above-gap excitation and a 1550nm diode laser whose energy corresponds to the defect level resulting in having a role of charge saturation at the defect level. The intensity of the two-wavelength excited PL was stronger than that without 1550nm laser irradiation for all specimens at room temperature regardless of Ga concentration. The results suggest the 0.8eV defect level acts as recombination center at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
