Abstract
BFO possess high remnant polarization (∼100 μC/cm2) and low direct band gap (∼2.7 eV) having potential for photovoltaic (PV) applications. In the present work, WO3 insulating layer is utilized with BFO and BFO/WO3 bilayer thin film structure is fabricated for reducing the leakage current along with possessing the low band gap and high ferroelectric polarization. In BFO/WO3 bilayer structure, the WO3 nanostructured thin film layer was fabricated utilizing rf-magnetron sputtering technique under the optimized parameters while BFO thin film layer was fabricated by altering the incident energy of excimer laser (150 mJ − 250 mJ) in Pulsed Laser deposition technique. BFO/WO3 bilayer structure prepared at 200 mJ laser energy demonstrated the superior ferroelectric properties (Ps = 63.24 µC/cm2 and Pr = 25.94 µC/cm2) with high values of short circuit photocurrent density (Jsc = ∼18 mA/cm2) and open-circuit voltage (Voc = ∼320 mV) under the UV illumination of Intensity = 160 mW/cm2 and λ = 355 nm. Obtained results suggest the utilization of prepared BFO/WO3 bilayer thin film structures on future novel energy harvesting purposes.
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