Abstract
Growth of Sr0.6Ba0.4Nb2O6 (SBN60) thin films on Pt-Si substrate has been carried out using Pulsed Laser Deposition (PLD) technique by varying the oxygen pressure from 1.33×10−3mbar to 26.67×10−3mbar and at a fixed substrate temperature of 800°C. The crystalline behavior of as-deposited films was studied using X-ray diffraction technique indicating the preferential growth along c-axis. The Metal- Ferroelectric- Metal (MFM) structure was used to measure the current-voltage (I-V) and dielectric properties of as-prepared SBN thin film. A large value of dielectric constant of about 503 at 1 MHz was obtained for SBN60 thin film with good ferroelectric polarization-hysteresis loop (Pr=5.32μC/cm2 and Pmax=9.86μC/cm2 . A high value of total stored energy density 4.60J/cm2 with an efficiency of 17% efficiently contributes towards its potential application in non-volatile memory devices.
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