Abstract
Multiferroic hexagonal yttrium manganese oxide (YM nO3, S1) and YM nO3/Y2O3 (S2) bilay er thin films were deposited on Si (111) substrate by the pulsed laser deposition technique. The crystal structure of both YM nO3 and YM nO3/Y2O3 bilayer thin films was studied using grazing incidence X-ray diffraction (GI-XRD). The surface morphology and elemental analysis of as-grown thin films were investigated by field emission scanning electron microscope (FESEM ) attached with energy dispersive x-ray spectroscopy (EDS). The room temperature electrical properties, leakage current versus voltage (I-V) characteristics were investigated. The XRD studies revealed that the single and bilayer YMnO3 thin films are poly crystalline and preferred oriented (004,110, and 214) hexagonal YM nO3 structure. The leakage current density of S1 and S2 thin films is measured to be 1.15x10−4 and 1.01x10−4 A/cm2 at +5V, respectively.
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