Abstract
(Bi0.95La0.05)(Fe0.97Cr0.03)O3/CoFe2O4 double layered thin film was prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. By introducing CoFe2O4 buffer layer, the leakage current density and the multiferroic properties have been significantly improved. Low leakage current density of 3.3×10−7A/cm2 at 100kV/cm, saturated ferroelectric hysteresis loop with 2Pr of 33μC/cm2 and 2Ec of 1120kV/cm at applied electric field of 1180kV/cm and ferromagnetic hysteresis loop with 2Mr of 39kA/m and 2Hc of 298kA/m at the magnetic field of 1587kA/m were observed in the double layered thin film at room temperature. The improved electrical and multiferroic properties are ascribed to the stabilized perovskite structure by reducing oxygen vacancies due to the co-doping elements, which may also suppress the cycloid spin structure in BiFeO3. Furthermore, CoFe2O4 buffer layer acts as a current barrier of (La, Cr) co-doped BiFeO3.
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