Abstract
This study involved an investigation of the structural, electrical, and multiferroic properties of a BiCrO3/BiFeO3 (BCO/BFO) double-layered thin film that was prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical solution deposition method. X-ray diffraction and Raman spectroscopy studies revealed the formation of tetragonal and rhombohedral structures for the BCO/BFO double-layered thin film without any detectable secondary phases. A saturated ferroelectric hysteresis loop with a remnant polarization (2Pr) of 37μC/cm2 and a coercive field (2Ec) of 1004kV/cm at an applied electric field of 1154kV/cm and a ferromagnetic hysteresis loop with a 2Mr value of 0.044emu/cm2 and a 2Hc value of 276Oe at a magnetic field of 10kOe were observed for the BCO/BFO double-layered thin film at room temperature. The leakage current density of the BCO/BFO double-layered thin film was 2.88×10−4A/cm2 at an external electric field of 100kV/cm. The enhanced multiferroic properties observed for the BiCrO3/BiFeO3 thin film correlated with its net effects, such as a decrease in the oxygen vacancy density, a stabilization of the perovskite structure, and small changes in the lattice parameter caused by compressive strain resulting from the coupling of the BiFeO3 and BiCrO3 layers.
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