Abstract
An optimal imposition method of anthraquinone triazenes on silicon lining was selected. This allowed to create a nanometer film that can be used as dielectric aromatic buffer layers. A morphological research of triazene films shows the existence of delocalized globular anthraquinone macromolecular microformation on the background of triazene uneven layers. The oxidized surface of the triazene substrate is applied better than those without the oxide. This is caused by distribution of electron density in triazene which creates an additional Si/SiO2 coupling system and by presence of voluminous aromatic substituents which impairs the uniformity of film deposition and reduces its thickness.
Highlights
There is a big scientific interest in researching organic triazene polymers in recent years [1,2]
This compound was produced by classical reaction of azo coupling: 9,10- anthraquinone-1,4-diazonium was spilled into amine solution in ethanol: The electroactive layers vacuum deposited by Azo-1, which contained the double conjugated backbone and longer alkyl chains, could retain invariable film quality from room temperature to 125°C, and the corresponding devices show excellent ternary data-storage performance, while the “counterpart” molecules Azo-2, exhibit poor film stability and even have no typical electrical characteristics
This paper investigates the peculiarities of the deposition of triazine films on the oxidized silicon substrate by microphotography and spectral ellipsometry
Summary
There is a big scientific interest in researching organic triazene polymers in recent years [1,2]. Zhang Yixing [8] with co-authors was investigating the possibility of 9,10-anthraquinone azo compounds usage (with layer thickness 85 nm) in storage devices. This compound was produced by classical reaction of azo coupling: 9,10- anthraquinone-1,4-diazonium was spilled into amine solution in ethanol: The electroactive layers vacuum deposited by Azo-1, which contained the double conjugated backbone and longer alkyl chains, could retain invariable film quality from room temperature to 125°C, and the corresponding devices show excellent ternary data-storage performance, while the “counterpart” molecules Azo-2, exhibit poor film stability and even have no typical electrical characteristics.
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