Structure and composition of chemically deposited In2S3 thin films

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Nanostructured thin indium(III) sulfide thin films 285–756 nm thick are obtained via chemical deposition from aqueous solutions containing indium chloride, thioacetamide, tartaric acid, and hydroxylamine hydrochloride at temperatures of 343–368 K. Oxygen- and carbon-containing impurities, which are not observed in the film bulk (at a depth of 12 nm), are detected in the surface layers of the films. When the synthesis temperature increases, the layer morphology changes substantially and the crystallite size increases from 70 to 150 nm. Upon annealing at a temperature of 573 K, crystallite aggregates are fused and In2S3 films are enriched with 6 to 10 at % of oxygen.