Abstract
Thin films of indium(III) sulfide have been prepared by chemical precipitation from aqueous solutions containing indium(III) nitrate, thioacetamide, tartaric acid, and hydroxylamine hydrochloride at 333–368 K. Kinetics of In2S3 precipitation and the films growth under conditions of spontaneous formation of the solid phase in the solution has been studied. Formal rate law of indium(III) sulfide formation accounting for the partial orders of In2S3 precipitation with respect to the system components and the process activation energy has been derived. The effects of the reaction mixture composition, temperature, and the synthesis duration of In2S3 films growth have been studied.
Published Version
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