Abstract
Ge growth on stepped Si(1 1 1) surfaces misoriented toward 〈 1 1 2〉 , 〈1 1 0〉 and 〈1 1 2 〉 was investigated with a scanning tunneling microscope (STM) on the same Si(1 1 1) substrate, where these different steps exist around the sidewall of a hole fabricated photolithographically. After high temperature (1200 °C) annealing for several minutes, the steps on the sidewall of a hole exhibit the threefold symmetry, which consists of debunching 〈 1 1 2〉 -type steps and heavy bunching 〈1 1 0〉 and 〈1 1 2 〉 -type steps. After Ge deposition of up to three bilayers of Ge at 400 °C, the distribution of three-dimensional (3D) islands becomes selectable on the three types of stepped surfaces. The step-flow growth in the step band region decreases the critical thickness of the transition from two-dimensional to three-dimensional growth. The surface energy at the step bunch and Ge islands become more important than the strain energy, and selective growth of Ge islands is realized.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call