Abstract
Nanostructured substrates are an interesting path towards the production of quantum dots devoted to microelectronic applications. In this work we report results on the effects of different nanopatterning methods to obtain lateral ordering of Ge islands grown on Si. By using Scanning Tunneling Microscopy we have studied in real-time the wetting layer growth and islands formation on nanopatterned Si substrates at 500 °C. We compare results obtained on Si substrates nanopatterned by using two different techniques: STM lithography and natural patterning induced by surface instabilities such as step bunching. Different issues on both cases have been addressed: substrate preparation, Ge dots placement and growth mode. We have observed that, on Si(001), the Ge islands nucleate near the holes and on Si(111) step bunching can guide the growth of aligned rows of islands.
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