State-of-the-Art HgCdTe at Raytheon Vision Systems

Abstract

Dark current density data recorded over the past 14 years at Raytheon Vision Systems on short-wavelength infrared (SWIR) and medium-wavelength infrared (MWIR) devices were examined. This included HgCdTe detector arrays grown by liquid-phase epitaxy on CdZnTe and molecular beam epitaxy on both silicon and CdZnTe substrates. This study analyzed zero-bias resistance–area product and current–voltage measurements from test structure assemblies included on every detector wafer. The data span cutoff wavelengths from 1.7 μm to 7.5 μm and operating temperatures from 40 K to 300 K. A basis is derived for a simple manufacturing trend model for a wide range of cutoffs and temperatures. This model uses a function similar to Tennant’s Rule’07 but includes a generation–recombination (GR) term. Dark current densities below the test set limit are extrapolated assuming GR-limited performance. Model assumptions are tested using sensor chip assembly (SCA) median dark current density values at the same inverse cutoff–temperature products. This model allows probabilistic determination of array manufacturability and prediction of yield, and provides a statistical basis for Raytheon’s state-of-the-art performance.