Abstract
Measurements have been made of the thickness distribution and etch rate of sputtered SiO 2 films in the vicinity of steps of various heights and of various materials. Thickness distribution near a step can be calculated approximately, and deviations from the calculated values are related to the re-emission coefficient of SiO 2 as influenced by sputtering parameters. The etch rate of the film near the step is influenced by the material that composed the step, and it is shown that material from the step is incorporated in the film.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
