Oxidation characteristics of copper oxide thin films deposited by direct current sputtering under substrate temperature and post-deposition copper-ion implantation

Abstract

The oxidation and structural, optical and morphological properties of copper oxide thin films deposited by direct current magnetron sputtering under different substrate temperatures and oxygen (O2) partial pressures, and subsequent 200 keV Cu ion implantation are investigated. The colour of the films progressively changed from yellowish brown to dark brown and oxide phase from Cu2O to Cu4O3 to CuO through mixed phases with increase in oxygen partial pressure from 20 to 90 % of the working pressure and substrate temperature from room temperature (27 °C) to 350 °C. The rate of oxidation and crystallinity of the films substantially increased with increase in substrate temperature. The ion implantation in the room temperature deposited films produced significant crystallization and decrystallization with respect to the ion fluence, and that in 350 °C substrate temperature deposited films instigated Cu-rich phase. The substrate temperature and ion implantation engendered distinctive red shift of the absorption edge and prevalent changes in the interference patterns in the optical spectra of the films. The calculated direct band gap values of the films are in the range of 1.7 to 2.42 eV, which decreased to the range of 1.65 to 2.17 eV on ion implantation. The indirect band gap of the films with predominant Cu4O3 and CuO phases are in the range of 1.23 to 1.49 eV. The refractive index and extinction coefficient of the films at 1100 nm are in the range of 2.1 to 2.5 and 0.03 to 0.12, which increased to the range of 3 to 7 and 0.2 to 0.45, respectively, on ion implantation. The films displayed agglomeration of the particles and directional growth of the agglomerates with respect to O2 partial pressure and substrates temperature, and increase in the size of the particles / agglomerates, and rough surface morphology on ion implantation.