Abstract
A new model of the step height control of a micromachined multilevel Si(100) terraced structure by KOH anisotropic etching with one photomask is proposed. The main factors affecting the step height of the terraces include the etching rate and etching time of the KOH solution, the angle of misalignment from the ⟨110⟩ direction of the silicon crystallography and the geometry of the photomask pattern, especially the relation between the width array [bn] and the interval array [an] of the masked areas. The different step heights of the multilevel structure can be obtained by the different dimensions of the mask pattern. If the multilevel structure has the same step height, the widths [bn] and intervals [an] of the masked areas must be an arithmetic progression. This will simplify the experimental design for application. The fabrication of three-level to eight-level Si(100) terraced structures has been demonstrated on this model and experiments.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
