Abstract
Bombardment of a growing thin film by negative ions can lead to changes in the film through the process of resputtering. Macro-effects of resputtering (effects on the film thickness) include a slowing of the film growth rate and, in some cases, a complete suppression of the film growth as well as an etching of the substrate materials. To study this result of resputtering, rf-diode sputtering was used to deposit BaTiO3 films under a variety of conditions, varying deposition time, rf-power level, substrate-to-target distance, total gas pressure, and argon, oxygen, and hydrogen partial pressures. The effect resputtering had on the thickness was seen to be a result of the competition between deposition and etching of the thin film material. The relative influence of the various sputtering parameters and the effect each of these has on the thickness distribution were examined. It was found that the greatest influence was system geometry, followed by rf-power level. Various methods of controlling resputtering are discussed.
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