Abstract
Thin epitaxial Fe films were grown on singular and vicinal GaAs(001) substrates, and their magnetic and electronic structures were investigated by synchrotron-based spin-resolved and spin-integrated photoelectron spectroscopy with different Fe thickness. There were two types of substrates: one was a Si-doped n-type GaAs(001) surface with doping concentration of 2 × 1018 cm -3 (singular substrate), and the other was orientated by 3° toward the (111)A direction (vicinal substrate). Spin polarization of the secondary electron peak at different growth stages of Fe coverage for the singular substrate sample and the vicinal one were measured. In the case of singular substrates, there was a dependence of their initial surface reconstruction, which is associated with complex domain structure, while no such the dependence was observed in the case of vicinal substrates. The result from the vicinal sample suggests the geometrical influence of the initial surface stoichiometry of the substrate.
Published Version
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