Abstract
We investigated In0.8Ga0.2As self-assembled quantum dots (SAQDs) and their underlying GaAswire structures grown by metalorganic vapour phase epitaxy onSiO2-patterned exact and vicinal (001) GaAs substrates. The directions of themisorientation of the vicinal (001) GaAs substrate and the patterned wireSiO2 mask were . During the growth of the GaAs layer onSiO2-patterned vicinal(001) GaAs substrates, {110}, {111}A,and {113}A facets were evolved by the opening layer width of the masks and themisorientation angles of the substrates. The ratio of the growth rate on the{111}A sidewalls to that on theneighbouring facets, (G{111}A), was increased by using the vicinal substrate having the highermisorientation angle, hence the surface migration of Ga adatoms from the{111}A sidewalls to the top region decreased. In0.8Ga0.2As SAQDs having regular periodicity on a narrow (001) top terrace were formed on aSiO2-patterned 5°-off (001) GaAs substrate.
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