Abstract
The evolution of the surface morphology of epitaxial GaAs layers grown at low substrate temperatures (LT-GaAs) on singular and vicinal (001) GaAs substrates is studied by means of kinetic Monte-Carlo simulations. The simulation model includes the effects of Ehrlich–Schwoebel barriers at step-edges as well as anisotropic surface diffusion. We find that the surface morphology is dominated by a pattern of elongated growth mounds, which are organized into columns parallel to [1̄10]. The formation of this pattern is gradually suppressed on vicinal substrates as the misorientation angle increases. Simulated surface morphologies are compared to atomic force microscopy measurements on LT-GaAs epilayers grown on singular GaAs(001) substrates at different temperatures and good quantitative agreement is found. We propose to use vicinal substrates for LT-GaAs growth in order to overcome the known problem of epitaxial breakdown above a certain epitaxial thickness.
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