Abstract
There are two mechanisms established for increasing the radiation resistance of optical properties of micron-sized zinc oxide (mZnO) powder modified by gadolinium oxide (nGd2O3) nanoparticles by means of relaxation of the primary radiation defects (electrons and holes): — in atoms of rare-earth element gadolinium; — on Gd2O3 nanoparticles. During modification with gadolinium oxide micron-sized particles, only one (first) mechanism for radiation resistance increasing is enabled. These results are obtained by recording diffuse reflectance spectra in high vacuum in the range of 0.2–2.5 μm under radiation exposure by accelerated electrons (in situ). The established mechanisms for increasing radiation resistance refer not only to the types of powders under the study, but also to other types of oxide semiconductor powders and rare-earth elements. These mechanisms can also be extended to the photo résistance of oxide powders modified by nanoparticles and solid solutions based on them.
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