Abstract
Abstract Transverse magnetoresistance in p-type conductivity Si whiskers with different impurity concentration that correspond to the dielectric side of metal-insulator transition were studied in magnetic fields 0–8 T at low temperatures 1.6 to 50 K. The presence of negative magnetoresistance in Si whiskers with concentration 2 × 1018 cm−3 was observed and associated with weak localization. The obtained parameters of phase coherence length lφ and spin-orbit coherence length lso comprise approximately 45 nm and 750 nm, respectively, at 4.2 K. The parameters obtained for Si whisker indicate the presence of hopping conductivity, orders of magnitude stronger than the parameters obtained for Si whisker with variable-range conductance, which indicates substantial impact of Ni impurities on the whisker magnetoresistance.
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