Abstract
The conditions of vapor-phase Si whisker growth are examined, and the role of the surface Gibbs energy in the vapor–liquid–solid process is evaluated. The mechanism responsible for the catalytic activity of the liquid phase on the tip of Si whiskers is elucidated. Experimental surface tension data are used to estimate the driving force acting on the three-phase line of contact upon a displacement of the liquid droplet in the course of whisker growth.
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