Abstract
Abstract The paper presents studies of electrical properties of Si whisker joints grown in a closed bromide system by chemical transport reaction method. Various morphological types—“X”, “Y” and “†” joints were under investigation. The length of the whiskers in the joints is equal to 3–10 mm, the whisker diameter ranges from 30 to 100 μm. The resistivity of Si whiskers was changed from 0.01 to 1.0 Ω cm. I–U characteristics of the joints were measured and S- and C-type characteristics were obtained. On the basis of the former a generator of low frequent impulses was designed, while the latter gives an opportunity to design a converter of variable current.
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