Abstract
The paper describes diamond growth on (100) oriented silicon substrate by a laser-induced chemical transport reaction (LICTR) method. Scanning electron microscopy indicates the LICTR deposited diamonds have a cubic structure. Their Raman spectrum observed at Stokes shifts between 1300 and 1370 cm -1 shows a single sharp line with the position and full width at half-maximum very close to those of natural diamond. These results contrast with those obtained for diamond produced by hot filament chemical vapour deposition.
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