Abstract
SPICE modeling of silicon carbide (SiC) MOSFET considering the influence of interface traps has been carried out, which is able to describe the characteristics of the MOS transistors in all operation modes at different interface trap densities and measurement temperatures. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expression, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of SiC MOSFET. Key parameters in the advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The static characteristics of the developed SiC MOSFET model have been validated with the production Datasheet, and the dynamic characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching performances of SiC MOSFET has been quantitatively discussed, and reasonable gate driving voltage of SiC MOSFET with different interface-trap densities has been revealed.
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