Abstract
SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.
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