Abstract
The motor drive has been widely adopted in modern power applications. With the emergency of the next generation wide bandgap semiconductor device, such as silicon carbide (SiC) MOSFET, performance of the motor drive can be improved in terms of efficiency, power density, and reliability. However, the fast switching transient and serious switching ringing of the SiC MOSFET can cause unwanted high-frequency (HF) electromagnetic interference (EMI), which may significantly reduce the reliability of the motor drive in many aspects. In order to comprehensively reveal the mechanism of the EMI previously used in motor drives using SiC MOSFET, this paper plans to analyze the influences of both HF impedance of the motor and switching characteristics of the SiC MOSFET. A simulation model for motor drives has been proposed, which contains the HF circuit model of the motor as well as a semi-behavioral analytical model of the SiC MOSFET. Since the model shows a good agreement with the experimentally measured results on spectra of drain-source voltage of the SiC MOSFET (vds), phase to ground voltage of the motor (vphase), CM voltage (vcm), phase current of the motor (idm), and CM current (icm), it can be adopted to quantitatively investigate the influence of the motor impedance on EMI through frequency-domain analysis. Additionally, the impacts of switching characteristics of SiC MOSFET on EMI are also well studied according to relative experiment results in terms of switching speed, switching frequency, and switching ringing. Based on the analysis above, the relationship between motor impedance, switching characteristics of the SiC MOSFET, and HF EMI can be figured out, which is able to provide much helpful assistance for application of the motor drive.
Highlights
The motor drive has been recognized as the heart component in modern power applications, such as electric aircraft, maritime, railway transportation as well as new energy vehicles
The switching behavior of the silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFET) is considered as the source of electromagnetic interference (EMI)
This paper has investigated EMI in SiC-based motor drives based on modeling and experiment
Summary
The motor drive has been recognized as the heart component in modern power applications, such as electric aircraft, maritime, railway transportation as well as new energy vehicles. Equivalent circuit models for evaluating bearing voltage [10,11], CM voltage [14,15], CM current [14,15,16], and overvoltage on motor terminals [12,13,15] have been proposed These works have not properly considered the impact of switching behavior of the semiconductor device, which is widely considered as the source of the EMI [17]. The HF impedance characteristics of the motor and switching behavior of the semiconductor device are modeled and simulated by SPICE for EMI prediction.
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