Abstract
SiC (Silicon carbide) MOSFETs have significant performance improvements over Si devices. However, the high switching speeds caused sudden changes in current or voltage will generate high-frequency electromagnetic interference (EMI), which is considered to be a major source of interference for power converters. By shaping the switching transient into a Gaussian “S-shape”, EMI generation can be greatly suppressed. The active voltage control (AVC) has proved to be particularly effective in controlling high power IGBT's switching transient. However, a gate driver suitable for SiC MOSFET to force its switching transient to follow a pre-defined S-shape reference has not yet been proposed. In this paper, the AVC system for SiC MOSFETs are successfully designed, and the switching dynamic characteristics of SiC MOSFETs are defined with a smooth Gaussian waveform. Finally, the effectiveness of the proposed control system and the suppression effect of EMI are verified through simulations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
