Abstract
Molybdenum disulfide (MoS2) 2D-material is considered as one of potential candidates for next generation optoelectronic devices due to its tunable bandgap, relatively high carrier mobility, and good light absorption, etc. From the perspective of circuit simulation and system verification, an equivalent circuit model of MoS2/p-Si photodiode is required. In the paper, the optical response and the carrier transmission process of MoS2/p-Si photodiode are analyzed theoretically. A SPICE (Simulation Program with Integrated Circuit Emphasis) equivalent circuit model of MoS2/p-Si photodiode is proposed, which can be used to simulate the photoelectric characteristics of the 2D device. Based on the established SPICE model of MoS2/p-Si photodiode, the simulation results are consistent with the experimental results of MoS2/p-Si photodiode devices. The trans-impedance amplifier (TIA) is designed for MoS2/p-Si photodiode, and the set-up SPICE model is used to verify the designed TIA circuit. It shows that the SPICE model has potential application for the simulation of the opto-electrical system including the cutting-edge 2-D photo diode.
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