Extraction and Analysis of Gamma Irradiated Si BJT SPICE Model

Abstract

The Simulation Program with Integrated Circuit Emphasis (SPICE) model parameters of pre and post-irradiated silicon bipolar junction transistor (Si BJT) were extracted with the use of Altium Designer (AD)/SPICE model wizard. The percentage changes (Δ%) between forward and reverse-bias parameters of existing BJT (ZETEX BCW72) SPICE model were estimated and also the degradation Δ% between the experimental data of pre and post-irradiated Si BJT were calculated. Then the new measured results by comparison were imported into AD/SPICE model wizard to extracts forward-bias parameters. The extracted forward-bias parameters were used to generate reverse-bias parameters through Δ%. The final extracted Si BJT SPICE model parameters were implemented in SPICE simulator to obtained forward and reverse Gummel plots. As expected, base current (IB) increases, the collector current (IC) increases slightly at low bias base-emitter voltage, leading to current gain degradation due to positive charge trapped in the oxide and interface of the BJT device. In addition, the results of the IB in the forward Gummel flows in parallel with base-emitter junction, while the IB in the reverse Gummel flows across the base-collector junction down to the back side collector contact through the collector region. Finally, the compared results of Si BJT forward Gummel simulation and experimental data showed good agreement.