Abstract
We present a study on the interfacial behavior of TM/Si and TM/SiO2 systems (TM: Mo, NiTi) by electron-induced X-ray emission spectroscopy (EXES), X-ray photoelectron spectroscopy assisted by argon bombardment and secondary ion mass spectrometry (SIMS). A few nanometers thick amorphous interlayer forms without annealing at the interface of each system. We give an estimation of the composition of the interlayers, and of the spatial disposition of the compounds formed along the interfacial zone. We find a good agreement and complementarity between the analysis methods. Studied TM/SiO2 systems are shown to be more reactive than TM/Si systems. Moreover, the deposition rate of the metal could influence the reactivity between the metal and the substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
