Abstract
Diffusion processes taking place at the NiTi/Si, NiTi/SiO 2 and NiTi/Si 3N 4 interfaces under annealing are studied in order to understand the adherence properties of these systems after annealing. Secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) assisted by argon etching and electron-induced X-ray emission spectroscopy (EXES) are combined in order to analyse at a nanometric scale the interfaces before and after annealing. Considerable differences between diffusion processes in NiTi/Si and NiTi/SiO 2 are observed and can explain the difference between adherence properties of these systems after annealing. Among the three studied systems, NiTi/Si 3N 4 is shown to be the most suited for low voltage microactuation applications.
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