Abstract
We present a nanometric scale analysis of the NiTi/Si, NiTi/SiO 2 and NiTi/Si 3N 4 systems before and after annealing at 500 °C during 30 min, by secondary ion mass spectrometry and electron-induced X-ray emission spectroscopy. Before annealing, a few nanometers thick transition layer forms at the interface of each system. Under annealing, a NiSi 2 layer forms in the NiTi/Si system over several tens of nanometers, whereas a TiO x diffusion barrier builds up at the NiTi/SiO 2 interface. A few nanometers thick mix layer composed of TiSi 2, TiN and NiSi 2 forms at the NiTi/Si 3N 4 interface. This interface presents an intermediate reactivity under annealing between that of NiTi/Si and NiTi/SiO 2.
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